This work suggests a fully integrated power amplifier (PA) in GaN technology that supports multi-mode operation. The input matching network has assembled as a Ttype, which is working to construct the wideband MN. The designed MN realizes the impedance match. Decreases in the target impedance zone in the intended frequency band are achieved using load-pull and source-pull technologies. The 10 W GaN HEMT has been used to design, fabricate, and measure broadband, highly efficient PAs. A bandwidth of 70.8% is attained using PA between 0.9 and 5.4 GHz. With an output power of 59% to 70%, a drain efficiency and PAE of more than 33 dBm, and a gain between 10 and 12.1 dB.